Abstract
This research has established the process to transplant GaAs solar cells from GaAs substrate to Si substrate without degrading the conversion efficiency. The conversion efficiency of GaAs solar cell bonded to Si substrate using epitaxial lift-off process is almost the same as that grown on GaAs substrate and is superior to that grown on Si substrate by heteroepitaxy.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
