Epitaxial Lateral Overgrowth of Silicon on SiO2 Investigated by X-Ray Topography

Abstract

ABSTRACTSilicon lamellae grown laterally over silicon dioxide by liquid phase epitaxy are investigated using X-ray double crystal topography. The lamellae are grown from Indium solution. All of the lamellae show growth striations with indium concentration differences of about 1016...4x1017 cm−3 Overgrowth widths up to 320μm are obtained on sides of the seeding window by growth under conditions of low supersaturation. Facetting of the lamella edges then becomes less pronounced and, therefore,striations are detected farther away from the windows.About 60% of the lamellae are free of crystallographic defects. In the defective lamellae single dislocations parallel to the sample surface are detected. They extend between seeding window edges and re—entrant corners at the lamella edges. Dislocations probably form during the cooling process due to strains near the edges of the seeding windows, and as a result of indium incorporation in high concentration.