Abstract
Epitaxial lateral overgrowth (ELOG) was used to grow InP on GaAs(100) substrates by metalorganic chemical vapor deposition (MOCVD). The selectivity of InP by ELOG is excellent and the regrowth InP epilayers have good morphology without polycrystalline on SiO2 mask. The [01¯1] directional mask stripes and high V/III ratio are benefit to InP lateral growth. Compared to conventional direct growth, ELOG is effective in reducing the dislocation density, relaxing compressing strain in epilayers. In addition, the full width at half maximum (FWHM) of X-ray diffraction (XRD) ω scans and room temperature (RT) photoluminescence (PL) for a 3μm thick epilayer by ELOG are 198arcsec and 44meV, respectively.
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