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Abstract
Epitaxial lateral overgrowth (ELO) of InP has been conducted for the first time by liquid phase epitaxy (LPE). The overgrowth has been studied for seeds in SiO2 of 2.5 to 7 μm width using starlike and parallel patterns. A wide and flat ELO layer was grown on (001) and (111)B oriented substrates at growth temperature between 773 and 873 K. No etch pits were found in the overgrowth regions. For (001) oriented substrates, the seed aligned away from 〈100〉 and 〈110〉 and their equivalent directions brought the maximum overgrowth up to 100 μm whereas the seed aligned adjoining these directions brought almost no overgrowth. On the other hand, for (111)B oriented substrates, the seed aligned away from 〈110〉 and its equivalent directions brought the maximum overgrowth up to 140 μm whereas the seed aligned adjoining these directions brought almost no overgrowth. The maximum ratio of width to thickness of 47 for (111)B ELO layer was obtained. This value is much larger than that of the (001) ELO layer of 17.
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