Abstract
Epitaxial thin films heterostructures of topological insulator candidate Sr3SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO∥(001)[100]c-YSZ∥(001)[100]Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.
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