Abstract
Epitaxial integrated d E 1 − d E 2 silicon detectors have been developed by using the multilayer epitaxial crystal growth technique combined with the chemical preferential etching technique. These detectors are useful for eliminating events affected by channeling and blocking effects in the identification of heavy ions using multiple detector telescope systems. Characteristics of d E detectors of the integrated d E 1 − d E 2 type are confirmed to as good as those of integrated E − d E detectors.
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