Abstract
Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) were employed to investigate the presence of hillock-like defects on InAs/GaSb type-II superlattice (T2SL) epitaxial wafers. Through TEM and Inverse Fast Fourier Transformation (IFFT) TEM imaging of the underlying epi-layer substrate, it was discerned that these defects stem from the lower surface layer of the polished InAs substrate. This substrate, characterized by a low dislocation density, is grown using the vertical gradient freeze (VGF) technique. The presence of these defects can be attributed to the sub-surface damage incurred during the substrate polishing process.
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