Abstract
The influence of growth temperature on the structural and magnetic properties of Heusler alloy Co2FeSi films grown on Si(1 1 1) substrates has been studied. Reflection high energy electron diffraction, double crystal x-ray diffraction (DCXRD) and transmission electron microscopy (TEM) measurements revealed that Co2FeSi layers were epitaxially grown on Si(1 1 1) substrates in an optimized growth temperature range 150 °C < TG < 200 °C. From DCXRD measurements and TEM, it was shown that in the optimized temperature range the Co2FeSi/Si(1 1 1) films crystallize in the B2 + L21 structures. All layers are ferromagnetic and well-ordered films on Si(1 1 1) show high magnetic moments with an average value of (1140 ± 250) emu cm−3, which is in good agreement with the value of bulk Co2FeSi at 300 K. The magnetic anisotropy is correlated with the structural properties of the layers.
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