Abstract
Si and SiGe epitaxial growth on Si(1 0 0) substrates by ion beam sputtering were examined. Lateral epitaxial growth by surface diffusion of sputtered Si atoms was confirmed to take place. Thicker critical epitaxial film thickness than that of the MBE grown film was obtained by introducing clean initial surface. SiGe epitaxial growth at low temperatures was realized as well by alternate sputtering.
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