Abstract
Abstract The use of lattice-matched (0.09%) hexagonal oxide substrate, ScAlMgO 4 , has considerably improved the quality of ZnO films grown by laser molecular-beam epitaxy. Surface morphology was extremely smooth as represented by atomically flat terraces and 0.26 nm high steps corresponding to the charge neutral unit of ZnO. Crystallinity was comparable to that of bulk single crystals: full-width at half-maximum value of ZnO(0 0 0 2) rocking curve was 39 arcsec. Optical absorption spectra showed clear splitting of A- and B-exciton lines, indicating low damping. Residual carrier concentration in pristine films was as low as 10 15 cm −3 with keeping high electron mobility of ∼100 cm 2 /V s. Therefore, the ZnO films grown on ScAlMgO 4 (0 0 0 1) substrates can be a starting point for realizing p-type ZnO. In fact, high concentration (∼10 21 cm −3 ) nitrogen can be doped with keeping high crystallinity.
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