Abstract
The epitaxial growth up to 20 monolayers of Xe on the Si(111) 7×7 surface at several temperatures between 25 and 50 K has been studied by LEED. A variety of different LEED patterns demonstrate that there is a significant influence of the silicon structure on the Xe growth mode. The 7×7 superstructure has a very peculiar influence depending on temperature, so that a periodic sequence of stacking faults is observed in the xenon even in thicker layers.
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