Abstract

ABSTRACTMethods for epitaxial growth of two dimensional materials are described. The lack of interlayer bonding in these materials allows for epitaxial growth with large lattice mismatches. Growth of MoSe2 on MoS2 (a 5% mismatch) or on SnS2 (10% mismatch) can be demonstrated. Scanning tunneling microscopy (STM) revealed remarkable structures in the epilayer as a result of the large mismatches. A technique using the STM or atomic force microscope (AFM) to selectively remove single molecular layers from the surface of layered materials is also described. The combination of these two technologies may result in the ability to produce nanoscale devices exhibiting quantum size effects.

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