Epitaxial Growth of SrxBa1 − xNb2O6 Thin Films Prepared from Sol-Gel Process

Abstract

In this study, we prepared SrxBa1 − xNb2O6 (x = 0.3, 0.5 and 0.7) thin film on 0.75 wt% La doped SrTiO3 (100) and (110) single crystal substrates. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethlene glycol monomethyl ether as solvents. The substrates were coated with the solution by spin coating method. As-coated thin films were heated from 973 to 1273 K in air. The grains of the thin film on La doped SrTiO3 (100) were pillar shaped and arranged in right angle to each other. On the other hand, the grains of these thin films on La doped SrTiO3 were pillar shape and arranged in one direction. The crystallographic relationship of the thin film between SrxBa1 − xNb2O6 and substrate that the 〈130〉 and 〈310〉 direction of the thin film on the substrate were oriented with c-axis in parallel to the substrate surface. On the other hand, (hk0) phase diffractions of SrxBa1 − xNb2O6 thin film on the substrate (110) were investigated in the XRD theta-2theta measurement. It is expected that the SrxBa1 − xNb2O6 (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO3 (110) single crystal substrate.