Abstract

SiC epitaxial growth is used to produce active layers with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology has shown remarkable progress, with polytype replication and wide-range doping control achieved using step-flow growth and controlling the C/Si ratio, respectively. In this chapter we describe the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth, and briefly discuss heteroepitaxial growth of 3C-SiC.

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