Abstract
We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si 0.7 Ge 0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.
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