Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

Rong Tu,Takashi Goto,Song Zhang,Chengyin Liu,Qingfang Xu,Xian Zhang,Kai Liu,Qizhong Li,Marina L Kosinova

doi:10.3390/coatings12030329

Abstract

SiC epitaxial wafers offer enormous potential for a wide range of telecom technologies due to their excellent properties. The experimental process was simulated by software, and the contour of gas flow velocity and raw material mass fraction inside the chamber were obtained. SiC films were epitaxially grown on 4H-SiC single crystalline substrates at different temperatures for one batch, using SiCl4, CH4, and H2 as precursors. With increasing temperature, the crystal phase changed from 4H-SiC at 1773 K to a mixture of 4H- and 3C-SiC, and then a mixture of 3C-SiC and graphite at higher than 1923 K. The film was mainly (004)-oriented 4H-SiC and (111)-oriented 3C-SiC.

Highlights

Academic Editor: Sakari RuppiSilicon carbide has the advantages of high heat resistance, high thermal conductivity, high critical breakdown voltage, and wide band gap [1,2] that make it suitable for electronic devices applied at high temperatures, high pressure, high frequencies, anti-irradiation, and other fields [3,4]
The microelectromechanical systems (MEMS) and metal-oxide-semiconductor field-effect transistors (MOSFET) under extreme conditions are mainly made of SiC films [5,6]
SiC thin films were epitaxially grown on 4H-SiC substrates by high-frequency heating

Summary

Introduction

Silicon carbide has the advantages of high heat resistance, high thermal conductivity, high critical breakdown voltage, and wide band gap [1,2] that make it suitable for electronic devices applied at high temperatures, high pressure, high frequencies, anti-irradiation, and other fields [3,4]. Chemical vapor deposition (CVD), as a widely used material processing technology, has become a suitable method for thin film preparation. The mainstream method to prepare SiC thin films is CVD using methane and silane as raw material with low deposition rates of 10 μm/h [8,9] because Si droplets are easy to form at high temperatures. Due to the thickness of SiC film for high-power devices applied to 10 kV being at least 100 μm, it takes dozens of hours to prepare SiC film using traditional raw materials. In chlorine-containing raw materials, such as SiCl4 and CH3 -SiCl3 , Cl atoms can combine with

Methods

Discussion

Conclusion