Abstract
Epitaxial growth of Si1−x−yGexCy epitaxial films on Si(100) has been investigated at 550°C in a SiH4-GeH4-CH3SiH3-H2 gas mixture using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing CH3SiH3 partial pressure, the deposition rate decreases depending on the Ge fraction, the C concentration increases linearly up to about 1021 cm−3, and the Ge fraction increases at a high CH3SiH3 partial pressure. These characteristics can be explained by the modified Langmuir-type formulation with the assumption that CH3SiH3 is adsorbed more preferably at the Si-Ge pair site, suppressing SiH4 and GeH4 adsorption. The electrical characteristics of the P-implanted Si1−x−yGexCy epitaxial film were evaluated and it was found that electrically inactive P increases at a C concentration over 3×1020 cm−3, which corresponds to the concentration where the lattice constant deviates from that calculated using Vegard's law.
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