Epitaxial Growth of Si(111)/Er2O3 (111) Structure on Si(111) by Molecular Beam Epitaxy

Abstract

The Si overlayers are grown by molecular beam epitaxy on atomically smooth Er2O3 (111) films prepared on Si(111) substrates. Single crystalline Si overlayers are achieved and are evident due to the spot-like reflective high energy electron diffraction (RHEED) patterns and x-ray diffraction patterns. The epitaxial relationship of the Si overlayer along the surface with respect to the orientation of Er2O3 and the Si substrate is as follows: overgrown Si(111)//Er2O3(111)//Si(111). The rough surface of Si overlayers, as identified by both RHEED patterns and atomic force microscopy images, indicates a three-dimensional growth mode. The reason for this is based on the interfacial energy argument. Further growth of Er2O3 films on this rough Si overlayer leads to the polycrystalline nature of the topmost Er2O3 layer.