Abstract
Epitaxial growth characteristics of nonpolar (M- and A-plane) ZnO on M- and R-plane sapphire substrates were investigated. The growth of ZnO along the c-axis direction, which aligns parallel to [2-1-10] and [01-11] directions of M- and R-plane sapphire, is achieved under lower growth temperature and/or VI/II ratio, and this growth direction is preferable for smooth lateral growth. Increasing the growth time, the surface becomes rough on M-plane, while is significantly improved on R-plane sapphire. The growth behaviour on R-plane sapphire can be attributed to the small lattice mismatching along the ZnO c-axis direction and enhanced lateral growth characteristics. From photoluminescence measurements, the appearance of peak at 3.383 eV, which is at higher energy compared to well-known impurity- and/or defect-related peaks, at 10 K suggests the residual strain in ZnO films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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