Abstract
Nonpolar ZnO films were grown epitaxially on (1010) sapphire substrates at 200 °C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to epitaxial, and enhanced the optical properties of near-band-edge emission. The interfacial structure shows multiple domain phases along sapphire (020) and the disappearance of a minor phase near the surface. As determined by X-ray diffraction, the epitaxial relation between ZnO and sapphire follows [002]ZnO∥[020]sapphire and [020]ZnO∥[006]sapphire. The photoluminescence intensity increased with increasing crystalline quality and thickness of ZnO films.
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