Abstract
We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of 125 ± 5 °C and the MgO matches the Ge with a cell ratio of 21/2:1, which renders MgO rotated by 45° relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100]∥MgO(001)[110]∥Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is 1430 ± 20 emu/cc, which is comparable to the value of bulk CoFe.
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