Abstract
Barium hexaferrite (BaM) films were deposited on 10nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe12O19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16900Oe, a magnetization (as 4πMs) of 4.4kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53GHz of 96Oe, thus demonstrating sufficient properties for microwave device applications.
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