Abstract
Epitaxial LaNiO3 (001) thin films with an SrTiO3/TiN template layer have been deposited on Si(001) single crystal substrates by rf sputtering. The epitaxial growth of LaNiO3 was achieved in an Ar/O2 environment at low substrate temperatures from 140 to 310 °C. The orientation relationship was determined to be LaNiO3(001)[110]∥SrTiO3(001)[110]∥TiN(001)[110]∥Si(001)[110]. The deposited LaNiO3 films show a smooth and featureless surface with roughness below 1 nm. These smooth and crack-free LaNiO3 films provide promising electrodes for the subsequent epitaxial growth of ferroelectric thin films.
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