Abstract
Epitaxial InN layers were deposited on MgAl 2O 4 (1 1 1) substrates by microwave-excited metalorganic vapor-phase epitaxy. The crystallographic orientation relationships between the InN layer and MgAl 2O 4 (1 1 1) were InN (0 0·1)∥MgAl 2O 4 (1 1 1) and InN [1 1·0]∥MgAl 2O 4 [1 0 0]. The full-width at half-maximum of the X-ray rocking curve of 97 arcsec was obtained on MgAl 2O 4 (1 1 1).
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