Abstract
Hydride vapor phase epitaxy (HVPE) is used nowadays for the growth of new III–V semiconductors (GaN, InGaN…), as well as for the selective epitaxy of III–V layers on patterned III–V [E.R. Messmer et al., Materials Science and Engineering B51 (1998), pp. 238–241] or silicon [O. Parillaud, E. Gil-Lafon, B. Gerard, P. Etienne, D. Pribat, Appl. Phys. Lett. 68 (1996), pp. 2654–2656] substrates. It has already been demonstrated that InAs/InP strained quantum wells [H. Banvillet, E. Gil-Lafon, R. Cadoret, P. Disseix, K. Ferdjani, A. Vasson, A.M. Vasson, A. Tabata, T. Benyattou, G. Guillot, J. Appl. Phys. 70 (3) 1991, pp. 1638–1641.] and InGaAs/InP quantum wells [N. Piffault, E. Gil, J. Leymarie, S.A. Clark, M. Anderson, R. Cadoret, A. Vasson, A.M. Vasson, J. Crystal Growth 135 (1994), pp. 11–22.] could be achieved by HVPE. We will present here the study of the growth of InAsP/InP strained quantum wells by HVPE. Relaxed InAsP layers were first grown in order to determine the composition of the alloys. Single quantum wells and multi-quantum well structures were then achieved. Photoluminescence analysis of the samples have shown the high quality of the InAsP/InP quantum wells. The feasibility of low dimensionality structures using HVPE process was then demonstrated, with an accurate control of the thickness and the composition of InAsP/InP quantum wells.
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