Abstract
We have grown InAs on single-crystalline Mn–Zn ferrite substrates by molecular beam epitaxy (MBE). In spite of a large lattice mismatch (about 30%), we succeeded in the growth of InAs epitaxial films. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) measurements have revealed that (111)InAs grows on (110)Mn–Zn ferrite substrates with the in-plane alignment of [112]InAs//[001]Mn–Zn ferrite.
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