Abstract
We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on Y AlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed.
Highlights
We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering
While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements
Because of large lattice mismatch, the surface morphology of these films has been inadequate for superlattice growth or for surface-sensitive experiments such as electrolyte gating,[21,22,23,24,25,26] which generally require atomically flat surfaces and interfaces with a root-mean-square roughness less than 1 nm
Summary
We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering. (Received 22 July 2015; accepted 25 August 2015; published online 9 September 2015)
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