Abstract
AbstractWe have grown InN films on 3C‐SiC (001) substrates with and without cubic GaN underlayers by RF‐N2 plasma MBE. It was found that, in the case of direct growth on 3C‐SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN (1 $ \bar 1 $00)//3C‐SiC (110), while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN (110)//cubic GaN (110). Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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