Abstract
By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300oC. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.
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