Epitaxial Growth of GaN on Patterned Sapphire Substrates

Abstract

This chapter describes the Patterned Sapphire Substrate (PSS). First, the properties and the fabrication process of the PSS are described. Then, the mechanism to decrease the dislocation density in the crystal growth of GaN layer on the PSS is elaborated. Third, the principle of the improvement in the LEE of the GaN-LEDs fabricated on the PSS is explained. Finally, the novel application of the PSS to grow nonpolar and semipolar GaN layers is introduced.