Epitaxial growth of fully relaxed Si 0.75Ge 0.25 on SOI substrate

Abstract

A fully relaxed Si 0.75Ge 0.25 film with low dislocation densities is fabricated by epitaxial growth on SOI substrate without depositing graded buffers. The relaxation mechanism of the SiGe layer directly grown on SOI substrate is also analyzed. For SiGe grown on SOI with low Ge content, the strain is redistributed between SiGe and the top Si of SOI substrate, and the strain residing in SiGe layer can be fully relaxed by the formation and expansion of dislocation half-loops near the SiGe/Si interface. The surface morphology and crystal quality of all samples are analyzed by optical microscopy and transmission electron microscopy (TEM), respectively. Compared to the Si 0.75Ge 0.25 layer epitaxially grown on graded buffer, the Si 0.75Ge 0.25 directly grown on SOI substrate appears good surface morphology and perfect crystal quality.