Abstract
We report on Ga2O3 deposition on c-plane sapphire substrates by hydride vapour phase epitaxy using metallic gallium, hydrogen chloride and dry air as precursors. High deposition rate up to 250µm/h has been realized. As confirmed by X-ray diffraction and micro-Raman measurements, produced films consisted of pure monoclinic β-Ga2O3 phase and were (−201) oriented. The full width at half maximum (FWHM) for (−201) rocking curve was decreasing with increasing GaCl flow. The narrowest FWHM of 20arcmin has been detected.
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