Abstract
Epitaxial growth of the ferromagnetic silicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60–300 °C, and the FeSi phase was formed at 400 °C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.
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