Abstract
We report the epitaxial growth of EuF2 (111) thin films on F-ion-conducting CaF2 (111) substrates. We achieved the fluorination of the Eu metal without introducing fluorination gas into the vacuum chamber during magnetron sputtering; instead, F atoms were supplied by the substrates. This growth method also allows EuO (100) epitaxial thin films to be fabricated on O-ion-conducting yttria-stabilized zirconia substrates. X-ray diffraction, transmission electron microscopy, and optical absorption spectra verified that the proposed method yields high-quality EuF2 and EuO thin films. Therefore, this study presents a novel thin-film growth method based on spontaneous anion diffusion from substrates.
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