Abstract
The preparation of CuO thin films by in situ oxidation of Cu ultrathin films deposited on MgO(100) and SrTiO 3(100) substrates in ultrahigh vacuum has been studied. The films were characterizes by reflection high energy diffraction (RHEED), X-ray diffraction, reflection X-ray pole figure analysis, and X-ray photoelectron spectroscopy. The growth processes of Cu and CuO thin films were different depending on the substrates: Cu grows epitaxially on SrTiO 3, while it grows with random orientation on MgO. CuO thin films grow epitaxially on MgO, but not on SrTiO 3(100). Films with thickness above 40 Å on MgO have an epitaxial plane, in which Cu atoms are surrounded by four coplanar oxygen ions.
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