Abstract
CuInSe 2 single crystals were epitaxially grown on (001) GaP, (001) GaAs, and (110) GaP by the halogen transport method. The orientation relationships in the growth on the (001) and (110) faces were (a) [001] CuInSe 2 ‖[001] sub and [100] CuInSe 2 ‖[100] sub ( c-axis orientation growth), and (b) [110] CuInSe 2 ‖[110] sub and [001] CuInSe 2 ‖[001] sub, respectively. On (001) InP, the orientation relationships between the layer and substrate consist of two sets: (c) [100] CuInSe 2 ‖[001] sub and [001] CuInSe 2 ‖[010] sub, and (d) [100] CuInSe 2 ‖[001] sub and [001] CuInSe 2 ‖[ 1 00] sub ( a-axis orientation growth). The above results, i.e., c-axis growth on (001) GaP and (001) GaAs and a-axis growth on (001) InP, could be explained by a criterion of the minimum lattice mismatch between grown layers and substrates. A series of growth experiments on (001) GaAs indicated that appropriate gas etching of the substrate surface and growth temperature were required for obtaining twin-free single-crystal epitaxial CuInSe 2.
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