Abstract
Heteroepitaxial films of cubic silicon carbide with twinning have been grown on (111) and (100) Si at 1050°C using hot filament chemical vapor deposition (HFCVD) and a carbonization process. The carbonization process played an important role in formation of the crystalline structure of the grown films. The optimum condition of carbonization on the surface of (100) Si was different from that of (111) Si. The growth rate of the deposited films increased as the substrate temperature was decreased. With both acetylene and propane as a carbon source, epitaxial SiC films were grown at 1050°C on (111) Si.
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