Abstract
The structural properties of epitaxial CuInS2 thin films with various [Cu]/[In] ratios grown on GaAs(001) by the co-evaporation method with three element-sources are reported in comparison to those of the films on GaP(001). For the In-rich and almost stoichiometric films, the CuIn5S8 phase and metastable CuAu-type ordering of the CuInS2 phase were exhibited. The Cu-rich films had sphalerite-type ordering of the CuInS2 phase. The slightly Cu-rich films had the c-axis oriented chalcopyrite-type CuInS2 structure with traces of the CuAu-type ordering and twins. Taking account of the fact that the slightly Cu-rich films on GaP had only the c-axis oriented chalcopyrite-type structure, the traces are considered to be due to the larger lattice mismatch for GaAs than for GaP. Broad photoluminescence emission bands in the band-edge region of the films, which could be related to shallow levels, were observed at low temperature.
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