Abstract
AbstractThin Ca films were evaporated on Si(111) under ultrahigh vacuum conditions and annealed in the temperature range 200–650°C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core‐level shift by x‐ray photoelectron spectroscopy was employed to study the silicide formation process. The formation temperature of CaSi2 films on Si(111) was found to be ∼350°C. Epitaxial growth takes place at ≥400°C. The morphology of the films, observed by atomic force microscopy, was correlated with their crystallinity as analysed by x‐ray diffraction. Copyright © 2002 John Wiley & Sons, Ltd.
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