Abstract
Molecular arrangements in C 60 and C 70 films grown epitaxially on GaSe and MoS 2 have been studied by reflection high-energy electron diffraction. C 60 and C 70 molecules were found to form close-packed hexagonal lattices on these substrates with lattice constants of 1.00 − 0.02 and 1.08 − 0.02 nm, respectively. The crystal axes of the C 60 and C 70 films grown on GaSe (0001) and the C 60 films on MoS 2 (0001) were parallel to the [11 2 0] axis of the substrates. On the other hand, the C 70 molecules were arranged along the [10 1 0] axis of the MoS 2 (0001) substrate. The lattice matching condition between a grown film and a substrate is thought to be a determining factor for the growth of the C 70 film on MoS 2.
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