Abstract
Epitaxial n-type infrared transparent conductive Bi2Se3 thin film was cultivated by molecular beam epitaxy (MBE) method on Al2O3 (001) substrate. The orientation between Bi2Se3 and the substrate is Bi2Se3(001)//Al2O3(1 10). Conducting mechanism ensued the small-polaron hopping mechanism, with an activation energy of 34 meV. The film demonstrates conductivity of n-type, and the resistivity is 7 × 10−4 Ωcm at room temperature. The Film exhibits an excellent carrier mobility of 1,015 cm2/Vs at room temperature and retains optical transparency in the near-infrared (>70%) and far-infrared (>85%) ranges. To the best of our knowledge, the Bi2Se3 film yields the best result in the realm of n-type Infrared transparent conductive thin films generated through either physical or chemical methods. To demonstrate the application of such films, we produced N-Bi2Se3/P-CuScO2 heterojunction diode device, the ∼3.3 V threshold voltage of which conformed fairly well with the CuScO2 bandgap value. The high optical transparency and conductivity of Bi2Se3 film make it very promising for optoelectronic applications, where a wide wavelength range from near-infrared to far-infrared is required.
Highlights
Infrared transparent conductive film is widely used in military and civilian infrared detectors, such as Infrared guidance, Infrared imaging, Infrared detection and Infrared methane/CO detector etc. (Zhang et al, 2021), because of its remarkable optical transmittance in the Infrared light range and strong electromagnetic shielding ability
A few infrared transparent conductive films have been developed by researchers
Chen from Yale University reported a doped In2O3-based infrared transparent conductive film for the first time, which has a transmittance of 40% in the 2.5–12 μm band and a resistance of 30 Ω/□ (Chen et al, 1983)
Summary
Infrared transparent conductive film is widely used in military and civilian infrared detectors, such as Infrared guidance, Infrared imaging, Infrared detection and Infrared methane/CO detector etc. (Zhang et al, 2021), because of its remarkable optical transmittance in the Infrared light range and strong electromagnetic shielding ability. The classic design strategy of infrared transparent conductive film is mainly to prepare the wide band gap semiconductor oxide by element doping and stoichiometric deviation film preparation, and adjust the composition to improve the infrared transmittance and conductivity of the film at the same time. Doping tends to cause a blue shift in the infrared transmission band of the oxide, and the film that deviates from the stoichiometric ratio has poor crystallinity and high resistance. The low carrier mobility will cause the resistivity of the film to decrease To counter this problem and achieve stoichiometric Bi2Se3 single crystal thin film with greater quality, we employed molecular beam epitaxy (MBE) to make the single crystal film at standard stoichiometric ratios. To examine the electrical properties, a Hall-effect measurement system (ACCENT HL55OOPC) was introduced, the test range was between 90 and 300 K
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