Abstract
ABSTRACTDielectric Ba1−xSrxTiO3 films were heteroepitaxially grown on Si (100) substrates by employing an epitaxial TiN interlayer. The crystallinity and surface morphology were investigated for the films prepared at various substrate temperatures and oxygen pressures. BaTiO3 and SrTiO3 films grown at 650°C and 550°C, respectively, at oxygen pressure of ∼105Torr had good crystallinity and very smooth surface morphology as observed by scanning electron microscopy and atomic force microscopy. Sharp interfaces with little interdiffusion of atoms were observed for these films by secondary ion mass spectrometry. Dielectric properties were evaluated for metal-insulator-metal capacitor structures, and revealed to be closely related to the crystallinity and surface morphology of films.
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