Abstract
ZnO:AI films were deposited on (11–0) oriented sapphire substrates heated up to 400°C with an RF power ranging from 25 to 170 W by RF magnetron sputtering from a ZnO target mixed with AI 2 O 3 of 2 wt%. Films deposited on substrates heated to a temperature in the range 50-350°C were (0001) oriented single crystals but those grown at 400°C consisted of crystallites with the (0001) and (101) orientation. The epitaxial relationships between ZnO:AI films and the substrates were determined by using the reflective electron diffraction patterns from the films and the back-reflection Laue patterns from the substrates. From these measurements, it was found that there were two types of epitaxial relationships between the (0001) ZnO:AI films and the (1120) sapphire substrates. One was [1010]ZnO:AI ll[00111]sapphire and the other [2110]ZnO:AI ‖[0001]sapphire.
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