Epitaxial growth of Al9Ir2 intermetallic compound on Al(100): Mechanism and interface structure

Abstract

The adsorption of Ir adatoms on Al(100) has been investigated under various exposures and temperature conditions. The experimental and theoretical results reveal a diffusion of Ir adatoms within the Al(100) surface selvedge already at 300 K. Above 593 K, two domains of a $(\sqrt{5}\ifmmode\times\else\texttimes\fi{}\sqrt{5})R26.{6}^{\ensuremath{\circ}}$ phase are identified by low energy electron diffraction (LEED) and scanning tunneling microscopy measurements. This phase corresponds to the initial growth of an ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ compound at the Al(100) surface. The ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ intermetallic domains are terminated by bulklike pure Al layers. The structural stability of ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$(001) grown on Al(100) has been analyzed by density functional theory based calculations. Dynamical LEED analysis is consistent with an Ir adsorption leading to the growth of an ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ intermetallic compound. We propose that the epitaxial relationship ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}(001)\ensuremath{\parallel}\mathrm{Al}$(100) and ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}[100]\ensuremath{\parallel}\mathrm{Al}[031]/[013]$ originates from a matching of Al atomic arrangements present both on Al(100) and on pure Al(001) layers present in the ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ compound. Finally, the interface between ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ precipitates and the Al matrix has been characterized by transmission electron microscopy measurements. The cross-sectional observations are consistent with the formation of ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$(001) compounds. These measurements indicate an important Ir diffusion within Al(100) near the surface region. The coherent interface between ${\mathrm{Al}}_{9}{\mathrm{Ir}}_{2}$ and the Al matrix is sharp.