Abstract
High rate deposition of Al (99.999% in purity) from dual sources of W-baskets was carried out onto NaCI crystals which were cleaved in air and heated at temperatures of 523 to 643 K in an ordinary high vacuum (2 x 10 -3 Pa). From a transmission electron microscopic observation, it was found that when deposited in thickness of 80 to 200 nm at a substrate temperature of 623 K the films grew continuously with island structure in (100) orientation. Moreover, (100) flat single-crystal films thicker than 200 nm often developed without containing islands and they usually included numerous dislocations. Most dislocations were come out from the films during heating to a high temperature above 873 K in the electron microscope.
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