Abstract
The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) is discussed and experimentally illustrated. Cyclic Voltammetry and Scanning Tunneling Microscopy are employed to carry out and monitor a quasi-perfect , two-dimensional growth of up to 35 monolayers (MLs) of Ag on Au(111) by repetitive galvanic displacement of underpotentially deposited Tl and Pb monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process. An X-ray Photoelectron Spectroscopy analysis finds no traces of Pb in the Ag deposit.
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