Abstract
The epitaxial growth of smooth, continuous Ag films on clean, characterised InP (001) surfaces at approximately=40 degrees C has been achieved by atomic beam epitaxy in ultra-high vacuum. Epitaxy on the P-stabilized, (001), C(2*8) reconstructed surface has been observed. The observed epitaxial relationship is consistent with published work on epitaxy of FCC metals on III-V compound semiconductors. Electrical measurements on the epitaxial Ag-InP contacts show that they are ohmic at 77 and 300K.
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