Abstract
We suggested “gas-beam-flow” condition and “gas-beam-flow” type reactors for epitaxial A1N growth using trimethylaluminum and ammonia. By flow visualization experiments, two gas flows of the sheath and the source were found to be laminar at atmospheric and at low pressures in the “gas-beam-flow” condition. The source gas flowed without touching the reactor wall. Using the “gas-beam-flow” type reactor, we succeeded in growing epitaxial A1N films at low temperature of 690 °C with a superior surface morphology.
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