Abstract
Films of niobium-rich Nb 3 Si have been grown epitaxially on polycrystalline, A15 Nb 3 Ir using electron beam evaporation. The use of epitaxy has allowed formation of A15 Nb 3 Si under deposition conditions in which it normally would not form. The Nb 3 Si has been made niobium-rich in order to match lattice parameters with the Nb 3 Ir. Some samples have then been brought toward stoichiometry by gradually lowering the evaporation rate of the Nb. The use of this compositional grading technique has been found to enhance the T c 's relative to the epitaxial films by in some cases more than 6 K. T c onsets, measured resistively, have been found up to 13.2 K. The effects of varying the thickness of the graded layer have been studied, and T c 's have been found to continue to increase after the graded layer has been brought to 25 at. % Si.
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