Abstract
We have investigated the epitaxial growth of (0001)Ru thin films on (111)ZrN/(111)Si epitaxial systems at room temperature using an ultrahigh-vacuum dc magnetron sputtering system. The film quality obtained and the epitaxial relationship were evaluated by X-ray diffraction, X-ray pole figure, grazing-incidence-angle X-ray reflectivity, and atomic force microscopy analyses. It was found that (0001)Ru films with a thickness of 100 nm were grown epitaxially on a (111)ZrN(40 nm)/(111)Si system even at room temperature with the directional relationship of Ru(0001)[1120]∥ZrN(111)[110]∥Si(111)[110]. In addition, it was also clarified that an epitaxial (0001)Ru film with a thickness of 3 nm on a (111)ZrN (6 nm)/(111)Si system can be regarded as a dense film with the same density as the bulk, and exhibits a fairly flat surface morphology with an average surface roughness of approximately 0.2–0.3 nm.
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